钢盾高强度铝合金手电筒 Sheffield Aluminium LED Torch

$4.17

钢盾 手电筒 1节 5号电池 1LED 高强度铝合金 强光 远射 战术防水防身 户外照明/1支
• 重型铝合金外壳,结实牢固• 采用国产LED灯珠• 采用防雨淋防震设计

Steel Shield Flashlight 1 section 5th battery 1LED high strength aluminum alloy glare long-range tactical waterproof self-defense outdoor lighting / 1
• Heavy-duty aluminum alloy casing, strong and solid • Made with domestic LED lamp beads • Rainproof and shockproof design

LED功率  LED power
1LED
光流通 Light circulation
3
电池  battery
1AA(1节5#电池)(1 section 5# battery)

 

 

80 in stock

Compare
SKU: 572731 Categories: , ,

Description

钢盾高强度铝合金手电筒(1节5号电池)1LED

铝合金手电筒是以发光二极管作为光源的一种新型照明工具,它具有省电、耐用、亮度强等优点。

发光二极管是由Ⅲ-Ⅳ族化合物,如GaAs(砷化镓)、GaP(磷化镓)、GaAsP(磷砷化镓)等半导体制成的,其核心是PN结。因此它具有一般P-N结的I-N特性,即正向导通,反向截止、击穿特性。此外,在一定条件下,它还具有发光特性。在正向电压下,电子由N区注入P区,空穴由P区注入N区。进入对方区域的少数载流子(少子)一部分与多数载流子(多子)复合而发光,如图1所示。

假设发光是在P区中发生的,那么注入的电子与价带空穴直接复合而发光,或者先被发光中心捕获后,再与空穴复合发光。除了这种发光复合外,还有些电子被非发光中心(这个中心介于导带、介带中间附近)捕获,而后再与空穴复合,每次释放的能量不大,不能形成可见光。发光的复合量相对于非发光复合量的比例越大,光量子效率越高。由于复合是在少子扩散区内发光的,所以光仅在靠近PN结面数μm以内产生。
理论和实践证明,光的峰值波长λ与发光区域的半导体材料禁带宽度Eg有关,即 ????λ≈1240/Eg(mm)式中Eg的单位为电子伏特(eV)。若能产生可见光(波长在380nm紫光~780nm红光),半导体材料的Eg应在3.26~1.63eV之间。比红光波长长的光为红外光。现在已有红外、红、黄、绿及蓝光发光二极管,但其中蓝光二极管成本、价格很高,使用不普遍。

Steel shield high-strength aluminum alloy flashlight (1 section 5th battery) 1LED aluminum alloy flashlight is a new type of lighting tool with LED as the light source, which has the advantages of power saving, durability and strong brightness. The light-emitting diode is made of a III-IV compound such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (phosphorus gallium arsenide) and the like, and its core is a PN junction. Therefore, it has the I-N characteristics of a general P-N junction, that is, forward conduction, reverse cutoff, and breakdown characteristics. In addition, it has luminescent properties under certain conditions. At the forward voltage, electrons are injected into the P region from the N region, and holes are injected into the N region from the P region. A part of the minority carriers (small children) entering the other area is combined with the majority carriers (multiple sub-groups) to emit light, as shown in Fig. 1. Assuming that luminescence occurs in the P region, the injected electrons directly composite with the valence band holes to emit light, or are first captured by the luminescent center and then condensed with the holes. In addition to this luminescent composite, some electrons are captured by the non-luminous center (this center is near the middle of the conduction band and the intervening band), and then recombined with the holes, and the energy released each time is not large enough to form visible light. The greater the ratio of the amount of luminescent composite to the amount of non-luminescent composite, the higher the photon efficiency. Since the recombination emits light in the minority carrier diffusion region, light is generated only within a few μm of the PN junction surface. Theoretically and practically, the peak wavelength λ of light is related to the forbidden band width Eg of the semiconductor material in the light-emitting region, that is, the unit of Eg in the formula λ ≈ 1240/Eg (mm) is electron volt (eV). If visible light (wavelength between 380 nm and 780 nm red) is produced, the Eg of the semiconductor material should be between 3.26 and 1.63 eV. Light longer than the wavelength of red light is infrared light. There are now infrared, red, yellow, green and blue light-emitting diodes, but the blue-light diodes are expensive and expensive, and are not commonly used.

Leave a Reply

Your email address will not be published. Required fields are marked *

X